NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

The auto‑search feature has been disabled based on user feedback. Enter a search term/phrase and click “Search” to begin.

Back to Results
Single-Event Effect Report for EPC Series eGaN FETs: EPC2015, EPC2014, EPC2012Heavy ion testing of newly available eGaN FETs from EPC were tested in May of 2012 at TAM. The EPC2001, EPC2012, and EPC2014 were tested for general single-event effect response from gold and xenon ions. Overall, the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data.
Document ID
20140011400
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
hdl:2014/44640
Authors
Scheick, Leif (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
September 8, 2014
Publication Date
January 1, 2014
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
JPL-Publ-14-7
Report Number: JPL-Publ-14-7
Funding Number(s)
OTHER: 3.23.5
CONTRACT_GRANT: NAS7-03001
OTHER: 102197
WBS: WBS 939904.01.11.30
Distribution Limits
Public
Copyright
Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available