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A 0.18 micrometer CMOS Thermopile Readout ASIC Immune to 50 MRAD Total Ionizing Dose (SI) and Single Event Latchup to 174MeV-cm(exp 2)/mgRadiation hardened by design (RHBD) techniques allow commercial CMOS circuits to operate in high total ionizing dose and particle fluence environments. Our radiation hard multi-channel digitizer (MCD) ASIC (Figure 1) is a versatile analog system on a chip (SoC) fabricated in 180nm CMOS. It provides 18 chopper stabilized amplifier channels, a 16- bit sigma-delta analog-digital converter (SDADC) and an on-chip controller. The MCD was evaluated at Goddard Space Flight Center and Texas A&M University's radiation effects facilities and found to be immune to single event latchup (SEL) and total ionizing dose (TID) at 174 MeV-cm(exp 2)/mg and 50 Mrad (Si) respectively.
Document ID
20140017345
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Quilligan, Gerard T.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Aslam, Shahid
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Lakew, Brook
(NASA Goddard Space Flight Center Greenbelt, MD United States)
DuMonthier, Jeffery J.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Katz, Richard B.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Kleyner, Igor
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
December 12, 2014
Publication Date
November 4, 2014
Subject Category
Solid-State Physics
Report/Patent Number
GSFC-E-DAA-TN17980
Report Number: GSFC-E-DAA-TN17980
Meeting Information
Meeting: International Workshop on Instrumentation for Planetary Missions (IPM-2014)
Location: Greenbelt, MD
Country: United States
Start Date: November 4, 2014
End Date: November 7, 2014
Sponsors: Universities Space Research Association, NASA Headquarters
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
radiation hardened by design
CMOS
Thermal imaging
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