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Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled TechnologiesWe report low-energy proton and low-energy alpha particle single-event effects (SEE) data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) latches and static random access memory (SRAM) that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 megaelectron-volt. The importance of low-energy protons to system-level single-event performance is based on the technology under investigation as well as the target radiation environment.
Document ID
20150000377
Acquisition Source
Goddard Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Pellish, Jonathan A.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Marshall, Paul W.
(Consultant)
Rodbell, Kenneth P.
(International Business Machines Corp. Armonk, NY, United States)
Gordon, Michael S.
(International Business Machines Corp. Armonk, NY, United States)
LaBel, Kenneth A.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Schwank, James R.
(Sandia National Labs. Albuquerque, NM, United States)
Dodds, Nathaniel A.
(Sandia National Labs. Albuquerque, NM, United States)
Castaneda, Carlos M.
(California Univ. Davis, CA, United States)
Berg, Melanie D.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Kim, Hak S.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony M.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Seidleck, Christina M.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Date Acquired
January 12, 2015
Publication Date
December 1, 2014
Subject Category
Physics Of Elementary Particles And Fields
Electronics And Electrical Engineering
Report/Patent Number
TNS-00420-2014.R1
GSFC-E-DAA-TN19164
Funding Number(s)
CONTRACT_GRANT: DE-AC04-94AL85000
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
random access memory
proton
single-event effects
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