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Dielectric Performance of High Purity HTCC Alumina at High Temperatures - A Comparison Study with Other Polycrystalline AluminaA very high purity (99.99+) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this co-fired material. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96 polycrystalline alumina (96 Al2O3), where 96 alumina was used as the benchmark. A prototype packaging system based on regular 96 alumina with Au thick-film metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500C. In order to evaluate this new HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96 alumina and a LTCC alumina from room temperature to 550C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96 alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.
Document ID
20150002320
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Chen, Liang-Yu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Date Acquired
March 3, 2015
Publication Date
May 14, 2012
Subject Category
Electronics And Electrical Engineering
Solid-State Physics
Report/Patent Number
GRC-E-DAA-TN15015
Meeting Information
Meeting: International Conference on High Temperature Electronics (HiTEC 2014)
Location: Albuquerque, NM
Country: United States
Start Date: May 13, 2014
End Date: May 15, 2014
Sponsors: International Microelectronics and Packaging Society
Funding Number(s)
CONTRACT_GRANT: NNC13BA10B
WBS: WBS 284848.02.04.03.02.02
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
High temperature
HTCC alumina
Electronic packaging
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