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Method of Forming Textured Silicon Substrate by Maskless Cryogenic EtchingDisclosed herein is a textured substrate comprising a base comprising silicon, the base having a plurality of needle like structures depending away from the base, wherein at least one of the needle like structures has a depth of greater than or equal to about 50 micrometers determined perpendicular to the base, and wherein at least one of the needle like structures has a width of less than or equal to about 50 micrometers determined parallel to the base. An anode and a lithium ion battery comprising the textured substrate, and a method of producing the textured substrate are also disclosed.
Document ID
20150003239
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Yee, Karl Y.
Homyk, Andrew P.
Date Acquired
March 18, 2015
Publication Date
April 1, 2014
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-13/895,499
Patent Number: US-Patent-8,685,268
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-8,685,268
Patent Application
US-Patent-Appl-SN-13/895,499
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