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Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) DeviceA nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.
Document ID
20150007192
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Miranda, Felix A.
Theofylaktos, Onoufrios
Pinto, Nicholas J.
Mueller, Carl H.
Santos, Javier
Meador, Michael A.
Date Acquired
May 1, 2015
Publication Date
April 28, 2015
Subject Category
Aerospace Medicine
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: US-Patent-9,016,108
Patent Application Number: US-Patent-Appl-SN-13/242,300
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,016,108
Patent Application
US-Patent-Appl-SN-13/242,300

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