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Schottky Diode Derating for Survivability in a Heavy Ion EnvironmentThe dependence of single-event failures in Schottky diodes on reverse voltage derating is discussed. Failure location and possible mechanisms are also discussed.
Document ID
20150017738
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Casey, Megan C.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Lauenstein, Jean-Marie
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Ladbury, Raymond L.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Wilcox, Edward P.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Topper, Alyson D.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Kim, Hak
(ASRC Federal Space and Defense Greenbelt, MD, United States)
LaBel, Kenneth A.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
September 11, 2015
Publication Date
July 13, 2015
Subject Category
Space Radiation
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN24945
Report Number: GSFC-E-DAA-TN24945
Meeting Information
Meeting: Nuclear and Space Radiation Effects Conference (NSREC)
Location: Boston, MA
Country: United States
Start Date: July 13, 2015
End Date: July 17, 2015
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
Schottky diode
single event effects
heavy ion
hardness assurance
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