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On-Chip Power-Combining for High-Power Schottky Diode Based Frequency MultipliersA novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.
Document ID
20150018787
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Siles Perez, Jose Vicente
Chattopadhyay, Goutam
Lee, Choonsup
Schlecht, Erich T.
Jung-Kubiak, Cecile D.
Mehdi, Imran
Date Acquired
October 5, 2015
Publication Date
September 22, 2015
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: US-Patent-9,143,084
Patent Application Number: US-Patent-Appl-SN-13/595,964
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,143,084
Patent Application
US-Patent-Appl-SN-13/595,964
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