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Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space StationThis paper reports long-term electrical results from two 6H-SiC junction field effect transistors (JFETs) presently being tested in Low Earth Orbit (LEO) space environment on the outside of the International Space Station (ISS). The JFETs have demonstrated excellent functionality and stability through 4600 hours of LEO space deployment. Observed changes in measured device characteristics tracked changes in measured temperature, consistent with wellknown JFET temperature-dependent device physics.
Document ID
Document Type
Conference Paper
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Prokop, Norman F.
(NASA Glenn Research Center Cleveland, OH, United States)
Greer, Lawrence C., III
(NASA Glenn Research Center Cleveland, OH, United States)
Chen, Liang-Yu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Krasowski, Michael J.
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
December 3, 2015
Publication Date
August 29, 2010
Publication Information
Publication: Proceedings of the Materials Science Forum
Volume: 679-690
Subject Category
Space Sciences (General)
Electronics And Electrical Engineering
Report/Patent Number
Meeting Information
Meeting: European Conference on Silicon Carbide and Related Materials
Location: Oslo
Country: Norway
Start Date: August 29, 2010
End Date: September 2, 2010
Sponsors: Oslo Univ.
Funding Number(s)
WBS: WBS 645846.
Distribution Limits
Public Use Permitted.
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