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Silicon Technologies Adjust to RF ApplicationsSilicon (Si), although not traditionally the material of choice for RF and microwave applications, has become a serious challenger to other semiconductor technologies for high-frequency applications. Fine-line electron- beam and photolithographic techniques are now capable of fabricating silicon gate sizes as small as 0.1 micron while commonly-available high-resistivity silicon wafers support low-loss microwave transmission lines. These advances, coupled with the recent development of silicon-germanium (SiGe), arm silicon integrated circuits (ICs) with the speed required for increasingly higher-frequency applications.
Document ID
20150022253
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Reinecke Taub, Susan
(NASA Lewis Research Center Cleveland, OH, United States)
Alterovitz, Samuel A.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
December 4, 2015
Publication Date
October 1, 1994
Publication Information
Publication: Microwaves & RF
Volume: 33
Issue: 10
Subject Category
Solid-State Physics
Report/Patent Number
E-9322
Report Number: E-9322
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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