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Schottky Diode Derating for Survivability in a Heavy Ion EnvironmentThe dependence of single-event failures in Schottky diodes on reverse voltage derating is discussed. Failure location and possible mechanisms are also discussed.
Document ID
20160000951
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Casey, Megan C. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD United States)
Ladbury, Raymond L. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Wilcox, Edward P. (ASRC Federal Space and Defense Greenbelt, MD, United States)
Topper, Alyson D. (ASRC Federal Space and Defense Greenbelt, MD, United States)
LaBel, Kenneth A. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
January 19, 2016
Publication Date
January 13, 2016
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN29189
Report Number: GSFC-E-DAA-TN29189
Meeting Information
Meeting: Joint Electron Device Engineering Council (JEDEC)
Location: Jacksonville, FL
Country: United States
Start Date: January 13, 2016
Sponsors: Joint Electron Device Engineering Council (JEDEC)
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
hardness assurance
Schottky diode
single event effects
heavy ion

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