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Silicon Schottky Diode Safe Operating AreaVulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Document ID
20160007752
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Casey, Megan C.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Campola, Michael J.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Lauenstein, Jean-Marie
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Wilcox, Edward P.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony M.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
LaBel, Kenneth A.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
June 20, 2016
Publication Date
June 13, 2016
Subject Category
Quality Assurance And Reliability
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN32636
GSFC-E-DAA-TN33316
GSFC-E-DAA-TN33016
Report Number: GSFC-E-DAA-TN32636
Report Number: GSFC-E-DAA-TN33316
Report Number: GSFC-E-DAA-TN33016
Meeting Information
Meeting: 2016 NEPP Electronics Technology Workshop (ETW)
Location: Greenbelt, MD
Country: United States
Start Date: June 13, 2016
End Date: June 16, 2016
Sponsors: NASA Headquarters
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
single event effects (SEE)
Schottky diode
heavy ion
hardness assurance
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