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Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal StructureAn integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
Document ID
20160012005
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Park, Yeonjoon
Choi, Sang Hyouk
Date Acquired
October 4, 2016
Publication Date
September 27, 2016
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: US-Patent-9,455,374
Patent Application Number: US-Patent-Appl-SN-14/279,614
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,455,374
Patent Application
US-Patent-Appl-SN-14/279,614
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