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Single-Band and Dual-Band Infrared DetectorsBias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.
Document ID
20170004927
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Ting, David Z.
Gunapala, Sarath D.
Soibel, Alexander
Nguyen, Jean
Khoshakhlagh, Arezou
Date Acquired
June 2, 2017
Publication Date
May 9, 2017
Subject Category
Electronics And Electrical Engineering
Instrumentation And Photography
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-14/516,359
Patent Number: US-Patent-9,647,164
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,647,164
Patent Application
US-Patent-Appl-SN-14/516,359

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