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Destructive Single-Event Effects in DiodesIn this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.
Document ID
20170006039
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Casey, Megan C. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD United States)
Campola, Michael J. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Wilcox, Edward P. (ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony M. (ASRC Federal Space and Defense Greenbelt, MD, United States)
Label, Kenneth A. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
July 3, 2017
Publication Date
June 26, 2017
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN43839
Report Number: GSFC-E-DAA-TN43839
Meeting Information
Meeting: NEPP Electronics Technology Workshop (ETW)
Location: Greenbelt, MD
Country: United States
Start Date: June 26, 2017
End Date: June 29, 2017
Sponsors: NASA Headquarters
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
single event effects (SEE); Schottky diode; heavy ion; hardness assurance

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