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Silicon Power MOSFETsRecent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.
Document ID
20170006041
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD United States)
Casey, Megan (NASA Goddard Space Flight Center Greenbelt, MD United States)
Campola, Michael (NASA Goddard Space Flight Center Greenbelt, MD United States)
Ladbury, Raymond (NASA Goddard Space Flight Center Greenbelt, MD United States)
Label, Kenneth (NASA Goddard Space Flight Center Greenbelt, MD United States)
Wilcox, Ted (ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony (ASRC Federal Space and Defense Greenbelt, MD, United States)
Kim, Hak (ASRC Federal Space and Defense Greenbelt, MD, United States)
Topper, Alyson (ASRC Federal Space and Defense Greenbelt, MD, United States)
Date Acquired
July 3, 2017
Publication Date
June 26, 2017
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN43971
Report Number: GSFC-E-DAA-TN43971
Meeting Information
Meeting: NEPP Electronics Technology Workshop (ETW)
Location: Greenbelt, MD
Country: United States
Start Date: June 26, 2017
End Date: June 29, 2017
Sponsors: NASA Headquarters
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
trench-gate MOSFET
single-event gate rupture (SEGR)
single-event burnout (SEB)
single-event effect (SEE)
power MOSFET

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