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Rhombohedral Super Hetero Epitaxy of Cubic SiGe on Trigonal c-plane SapphireNew rhombohedral super-hetero-epitaxy technology was developed at NASA. This epitaxy technology enables the growth of unprecedented cubic-trigonal hybrid single crystal structures with lattice match on sapphire (Al2O3) substrates, hence with little strain and very few defects at the interface.
Document ID
20170006645
Acquisition Source
Langley Research Center
Document Type
Conference Paper
Authors
Choi, Sang H. (NASA Langley Research Center Hampton, VA, United States)
Duzik, Adam J. (NASA Langley Research Center Hampton, VA, United States)
Date Acquired
July 19, 2017
Publication Date
July 10, 2017
Subject Category
Solid-State Physics
Report/Patent Number
NF1676L-26579
Report Number: NF1676L-26579
Meeting Information
Meeting: 2017 IEEE Photonics Society Summer Topicals Meeting Series
Location: San Juan
Country: Puerto Rico
Start Date: July 10, 2017
End Date: July 12, 2017
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: WBS 833011.02.R7.89Z5.16
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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