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Recent Radiation Test Results for Trench Power MOSFETsSingle-event effect (SEE) test results are presented for commercial grade, automotive grade, and radiation-hardened trench power MOSFETs.
Document ID
20170007315
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Lauenstein, Jean-Marie
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Casey, Megan C.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Wilcox, Edward P.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony M.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Kim, Hak S.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Topper, Alyson D.
(ASRC Federal Space and Defense Greenbelt, MD, United States)
Ladbury, Raymond L.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Label, Kenneth A.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
August 3, 2017
Publication Date
July 17, 2017
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN44381
Report Number: GSFC-E-DAA-TN44381
Meeting Information
Meeting: 2017 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2017)
Location: New Orleans, LA
Country: United States
Start Date: July 17, 2017
End Date: July 21, 2017
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
Degradation
single-event effect (SEE)
Schottky Diodes
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