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Subnanosecond Scintillation DetectorA scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.
Document ID
20170008516
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Hoenk, Michael
Hennessy, John
Hitlin, David
Date Acquired
September 6, 2017
Publication Date
August 22, 2017
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: US-Patent-9,739,898
Patent Application Number: US-Patent-Appl-SN-14/670,365
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,739,898
Patent Application
US-Patent-Appl-SN-14/670,365
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