NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Silicon Carbide Power Devices and Integrated CircuitsAn overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.
Document ID
20170009123
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Casey, Megan (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Samsel, Isaak (NASA Goddard Space Flight Center Greenbelt, MD, United States)
LaBel, Ken (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Chen, Yuan (NASA Langley Research Center Hampton, VA, United States)
Ikpe, Stanley (NASA Langley Research Center Hampton, VA, United States)
Wilcox, Ted (ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony (ASRC Federal Space and Defense Greenbelt, MD, United States)
Kim, Hak (ASRC Federal Space and Defense Greenbelt, MD, United States)
Topper, Alyson (ASRC Federal Space and Defense Greenbelt, MD, United States)
Date Acquired
September 28, 2017
Publication Date
June 26, 2017
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN44037
Report Number: GSFC-E-DAA-TN44037
Meeting Information
Meeting: NEPP Electronics Technology Workshop
Location: Greenbelt, MD
Country: United States
Start Date: June 26, 2017
End Date: June 29, 2017
Sponsors: NASA Goddard Space Flight Center
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
single-event gate rupture (SEGR)
single-event burnout (SEB)
power MOSFET
power device
single-event effect (SEE)
silicon carbide (SiC)

Related Records

There are no records associated with this record.
No Preview Available