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A Comparison of High-Energy Electron and Cobalt-60 Gamma-Ray Radiation TestingIn this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors
Document ID
20180001167
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Boutte, Alvin J.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Campola, Michael J.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Carts, Martin A.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Wilcox, Edward P.
(MEI Technologies, Inc. Greenbelt, MD, United States)
Marshall, Cheryl J.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Phan, Anthony M.
(MEI Technologies, Inc. Greenbelt, MD, United States)
Pellish, Jonathan A.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Powell, Wesley A.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Xapsos, Michael A.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
February 13, 2018
Publication Date
July 16, 2012
Subject Category
Space Radiation
Electronics And Electrical Engineering
Report/Patent Number
LEGNEW-OLDGSFC-GSFC-LN-1174
Report Number: LEGNEW-OLDGSFC-GSFC-LN-1174
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: Miami, FL
Country: United States
Start Date: July 16, 2012
End Date: July 20, 2012
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Public Use Permitted.
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