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Probing the SEB Sensitive Depth of a Power MOSFET Using a Two-Photon Absorption Laser MethodThis paper presents two-photon absorption test results on an engineering single-event burnout- (SEB-) sensitive power MOSFET to verify that the energy deposition/charge ionization in the highly-doped substrate does not contribute to SEB. It is shown that for a vertical power MOSFET, the SEB sensitive volume is the lightly doped epitaxial layer; the most sensitive region is under the polysllicon gate.
Document ID
20180001356
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Lauenstein, Jean-Marie
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Liu, Sandra
(International Rectifier Corp. El Segundo, CA, United States)
Titus, Jeffrey L.
(Naval Sea Systems Command Crane, IN, United States)
McMorrow, Dale
(Naval Research Lab. Washington, DC, United States)
Casey, Megan C.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Buchner, Stephen P.
(Naval Research Lab. Washington, DC, United States)
Warner, Jeffrey
(Naval Research Lab. Washington, DC, United States)
Phan, Anthony M.
(MEI Technologies, Inc. Greenbelt, MD, United States)
Topper, Alyson D.
(MEI Technologies, Inc. Greenbelt, MD, United States)
Kim, Hak S.
(MEI Technologies, Inc. Greenbelt, MD, United States)
LaBel, Kenneth A.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Yang, Becky
(International Rectifier Corp. El Segundo, CA, United States)
Zafrani, Max
(International Rectifier Corp. El Segundo, CA, United States)
Sherman, Phillip
(International Rectifier Corp. El Segundo, CA, United States)
Date Acquired
February 23, 2018
Publication Date
July 26, 2011
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NSREC 2011 - PB2
LEGNEW-OLDGSFC-GSFC-LN-1239
Meeting Information
Meeting: Annual IEEE Nuclear and Space Radiation Effects Conference (NSREC) 2011
Location: Las Vegas, NV
Country: United States
Start Date: July 25, 2011
End Date: July 29, 2011
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: IACRO 10-49771
CONTRACT_GRANT: IACRO 11-43951
Distribution Limits
Public
Copyright
Public Use Permitted.
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