Solid State Ephemeral Electric Potential and Electric Field Sensor

Systems, methods, and devices of the various embodiments provide a field effect transistor (FET) that controls equilibrium by reversing the effects of leakage currents affecting the gate response of the FET by using an equilibrium pump electrode. The equilibrium reversing gate FETs (ergFETs) of the various embodiments, may include an equilibrium pump electrode located within a non-conducting gap. The ergFETs of the various embodiments may provide solid state ephemeral electric potential and electric field sensor systems and methods for measuring ephemeral electric potentials and electric fields.