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High Power W-Band/F-Band Schottky Diode Based Frequency MultipliersA solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).
Document ID
20180006272
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Siles Perez, Jose Vicente
Lee, Choonsup
Chattopadhyay, Goutam
Cooper, Ken B.
Mehdi, Imran
Lin, Robert H.
Peralta, Alejandro
Date Acquired
October 15, 2018
Publication Date
September 11, 2018
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: US-Patent-10,075,151
Patent Application Number: US-Patent-Appl-SN-14/952,361
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-10,075,151
Patent Application
US-Patent-Appl-SN-14/952,361
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