Acquisition Source
Goddard Space Flight Center
Authors
Zhu, Xingguang (GE Global Research Center Niskayuna, NY, United States) Lauenstein, J.-M. (NASA Goddard Space Flight Center Greenbelt, MD, United States) Bolonikov, A. (GE Global Research Center Niskayuna, NY, United States) Jacob, B. (GE Global Research Center Niskayuna, NY, United States) Kashyap, A. (Microsemi Corp. Torrance, CA, United States) Sariri, K. (Frequency Management International, Inc. Huntington Beach, CA, United States) Chen, Y. (NASA Langley Research Center Hampton, VA, United States) Date Acquired
March 14, 2019
Publication Date
September 17, 2017
Subject Category
Electronics And Electrical Engineering Report/Patent Number
GSFC-E-DAA-TN64775GSFC-E-DAA-TN46843 Meeting Information
Meeting: International Conference on Silicon Carbide and Related Materials
Location: Washington, DC
Country: United States
Start Date: September 17, 2017
End Date: September 22, 2017
Funding Number(s)
CONTRACT_GRANT: NNX17AD05G
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
Single Expert
Keywords
SiCHeavy-ion radiationMOSFETSingle-event effect (SEE)