Acquisition Source
Goddard Space Flight Center
Document Type
Accepted Manuscript (Version with final changes)
Authors
Rebekah A. Austin
(Goddard Space Flight Center Greenbelt, Maryland, United States) Brian D. Sierawski
(Vanderbilt University Nashville, Tennessee, United States) Robert R. Reed (Vanderbilt University Nashville, Tennessee, United States) Ronald D. Schrimpf
(Vanderbilt University Nashville, Tennessee, United States) Kenneth F. Galloway
(Vanderbilt University Nashville, Tennessee, United States) Dennis R.Ball
(Vanderbilt University Nashville, Tennessee, United States) Arthur F. Witulski
(Vanderbilt University Nashville, Tennessee, United States) Date Acquired
April 13, 2020
Publication Date
December 6, 2019
Publication Information
Publication: IEEE Transactions on Nuclear Science
Publisher: Institute of Electrical and Electronics Engineers
Volume: 67
Issue: 1
Issue Publication Date: January 1, 2020
ISSN: 0018-9499
Funding Number(s)
CONTRACT_GRANT: 80NSSC18K0721
Distribution Limits
Public
Copyright
Use by or on behalf of the US Gov. Permitted.
Technical Review
External Peer Committee
Keywords
Heavy ionpower MOSFETsprobabilistic risk assessment,radiation hardness assurance methodologyreliability estimation