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U309 N-Channel Silicon Junction Field Effect Transistor Total Ionizing Dose Characterization ReportThe purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.
Document ID
20205004053
Acquisition Source
Goddard Space Flight Center
Document Type
Other - Test report for posting on Public Web Site https://radhome.gsfc.nasa.gov/
Authors
Jason Osheroff (Science Systems and Applications (United States) Lanham, Maryland, United States)
Megan Casey (Goddard Space Flight Center Greenbelt, Maryland, United States)
Date Acquired
July 1, 2020
Publication Date
August 1, 2020
Publication Information
Publication: Public Website
URL: https://radhome.gsfc.nasa.gov/
Subject Category
Electronics And Electrical Engineering
Space Radiation
Funding Number(s)
PROJECT: NASA Lucy Project, The First Mission to the Trojan Asteroids
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
Single Expert
Keywords
Total Ionizing Dose (TID)
InterFET Corporation U309
Junction Field Effect Transistor (JFET)

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