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MT29F512G08AUCBBH8-6IT:B NAND Flash Memory Total Ionizing Dose Test ReportThe purpose of this test was to characterize the Micron 512 GB NAND (MT29F512G08AUCBBH8-6IT:B) flash memory parameter degradation for total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated.
Document ID
20205006472
Acquisition Source
Goddard Space Flight Center
Document Type
Other - Test report for posting on public website https://radhome.gsfc.nasa.gov/
Authors
Alyson Dyan Topper (Science Systems and Applications (United States) Lanham, Maryland, United States)
Edward Wilcox (Goddard Space Flight Center Greenbelt, Maryland, United States)
Michael Campola (Goddard Space Flight Center Greenbelt, Maryland, United States)
Date Acquired
August 18, 2020
Publication Date
May 25, 2018
Publication Information
Publication: Public website
Publisher: NASA GSFC Radiation Effects and Analysis Group
URL: https://radhome.gsfc.nasa.gov/
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
CONTRACT_GRANT: 80GSFC18C0120
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
Single Expert
Keywords
TID
Flash Memory
NAND

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