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Far-Infrared Dielectric Functions: Silicon Nitride (SiNx), Silicon Oxide (SiOx), and High-Purity Silicon (Si)This work reports the numerical values of the dielectric functions derived from far-infrared measurements of silicon nitride, silicon oxide, and bulk high-purity silicon. These dielectric parameters have been previously reported in the literature and are presented here in a convenient form for future optical and sensor design applications.
Document ID
20205007162
Acquisition Source
Goddard Space Flight Center
Document Type
Technical Memorandum (TM)
Authors
Giuseppe Cataldo
(University of Maryland, Baltimore County Baltimore, Maryland, United States)
Edward J. Wollack
(Goddard Space Flight Center Greenbelt, Maryland, United States)
Date Acquired
September 3, 2020
Publication Date
September 30, 2020
Publication Information
Subject Category
Numerical Analysis
Funding Number(s)
WBS: 422335.05.34.04.01
CONTRACT_GRANT: 80GSFC17M0002
Distribution Limits
Public
Copyright
Use by or on behalf of the US Gov. Permitted.
Technical Review
Single Expert
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