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On-Chip p-MOSFET DosimetryOn-chip p-FETs were developed to monitor the radiation dose of n-well CMOS ICs by monitoring the threshold voltage shifts due to radiation induced oxide and interface charge.
Document ID
20210001263
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
hdl:2014/35570
Authors
Tardio, G. R.
Soli, G. A.
Blaes, B. R.
Buehler, M. G.
Date Acquired
July 1, 1993
Publication Date
July 1, 1993
Publication Information
Publisher: UNKNOWN
Distribution Limits
Public
Copyright
Other
Technical Review
Keywords
FET's
temperature
sensitivity
on-chip
FET
dosimeters
radiation
dose
CMOS
IC

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