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Experimental and theoretical aspects of electric-field-assisted positron kinetics in metal-oxide-silicon systemsWe use positron annihilation spectroscopy to study positron kinetics in electrically-biased metal-oxide-silicon system and trapping at the SiO2/Si interface.
Document ID
20210001799
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
hdl:2014/8569
Authors
Veen, A. van
Lynn, K. G.
Petkov, M. P.
Date Acquired
January 1, 2002
Publication Date
January 1, 2002
Publication Information
Publisher: UNKNOWN
Distribution Limits
Public
Copyright
Other
Technical Review
Keywords
MOS
electric
field
charge
kinetics

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