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160-190 GHz Monolithic Low Noise AmplifiersThis paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process.
Document ID
20210002711
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
hdl:2014/16719
Authors
Barsky, M.
Allen, B.
Liu, P.
Streit, D.
Block, T.
Sholley, M.
Chen, Y.
Lai, R.
Huang, T.
Wang, H.
Kok, Y.
Gaier, T.
Samoska, L.
Date Acquired
June 13, 1999
Publication Date
June 13, 1999
Publication Information
Publisher: UNKNOWN
Distribution Limits
Public
Copyright
Other
Technical Review
Keywords
low
noise
amplifiers

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