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Infrared Emission Spectroscopy as a Reliability ToolIn this paper we report on a technique based on infrared emission spectroscopy which has been found to be useful for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET).
Document ID
20210003288
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
hdl:2014/17742
Authors
Kayali, S.
Kim, Q.
Date Acquired
November 14, 1999
Publication Date
November 14, 1999
Publication Information
Publisher: UNKNOWN
Distribution Limits
Public
Copyright
Other
Technical Review
Keywords
infrared
emission
spectroscopy
reliability
tool
non-contact
temperature
measurement
MESFET
Lattice
dynamics

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