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Cryogenic GaAS JFETSGallium arsenide junction field-effect transistors (GaAS JFETS) are promising for deep cryogenic (<10k) readout electonics applications.
Document ID
20210004325
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
hdl:2014/33886
Authors
Fossum, E.
Cunningham, T.
Date Acquired
April 5, 1994
Publication Date
April 5, 1994
Publication Information
Publisher: UNKNOWN
Distribution Limits
Public
Copyright
Other
Technical Review
Keywords
structure
and
fabrication
of
GaSA
JFETS
and
their
performance

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