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CMOS Active Pixel Image SensorA new CMOS active pixel image sensor is reported. The sensor uses a 2.0mue double-poly, double-metal foundry CMOS process and is realized as a 28 x 28 array of 40 mue x 40 mue pixels. The Sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor applications.
Document ID
20210004555
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
Authors
Fossum, Eric R.
Mendis, Sunetra
Date Acquired
July 1, 1993
Publication Date
July 1, 1993
Publication Information
Publisher: UNKNOWN
Distribution Limits
Public
Copyright
Other
Technical Review
Keywords
CMOS
Active
Pixel
image
sensor

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