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On-Chip p-MOSFET DosimetryOn-chip p-FETs were developed to monitor the radiation dose of n-well CMOS ICs by monitoring threshold voltage shifts due to radiation induced oxide and interface charge.
Document ID
20210004678
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
hdl:2014/36318
Authors
Tardio, G. R.
Soli, G. A.
Blaes, B. R.
Buehler, M. G.
Date Acquired
January 1, 1993
Publication Date
January 1, 1993
Publication Information
Publisher: UNKNOWN
Distribution Limits
Public
Copyright
Other
Technical Review
Keywords
FETs
(Field-Effect
Transistors)
thick-gate
oxides
p-FET
design
radiation
dose

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