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Monolithic InGaAs JFET Active Pixel Tunable Image Sensor (MAPTIS)A new Monolithic InGaAs Active Pixel Multispectral Image Sensor is described. This Infrared sensor will utilize high quality InGaAs grown by Molecular Beam Epitaxy on InP substrate for the fabrication of a high speed Junction Field Effect Transistor array.
Document ID
20210004950
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
hdl:2014/27700
Authors
Fossum, E. R.
Cunningham, T. J.
Kim, Q.
Date Acquired
February 8, 1997
Publication Date
February 8, 1997
Publication Information
Publisher: UNKNOWN
Distribution Limits
Public
Copyright
Other
Technical Review
Keywords
hyper
spectral
responses
monolithic
near
room
temperature
active
pixel
sensor

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