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Microchannel Gate Temperature AnalysisPhotoemission spectra of a GaAs gate material of a metal semiconductor field effect transistor (MESFET) were analyzed to nondestructively assess the submicron-size local gate temperature.
Document ID
20210005504
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
hdl:2014/20381
Authors
Kayali, S.
Kim, Q.
Date Acquired
August 1, 1998
Publication Date
August 1, 1998
Publication Information
Publisher: UNKNOWN
Distribution Limits
Public
Copyright
Other
Technical Review
Keywords
Photoemission
spectra
GaAs
gate
material
metal
semiconductor
field
effect
transistor
(MESFET)
temperature.

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