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Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICsThis invited plenary paper summarizes recent significant progress towards development and deployment of manufacturable SiC JFET-R ICs technology for beneficial prolonged use in extreme environmental conditions previously inaccessible to semiconductor electronics.
Document ID
20210010188
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
P Neudeck (Glenn Research Center Cleveland, Ohio, United States)
D Spry (Glenn Research Center Cleveland, Ohio, United States)
M Krasowski (Glenn Research Center Cleveland, Ohio, United States)
L Chen (Ohio Aerospace Institute Cleveland, Ohio, United States)
Date Acquired
February 16, 2021
Subject Category
Electronics And Electrical Engineering
Solid-State Physics
Spacecraft Instrumentation And Astrionics
Meeting Information
Meeting: 2021 International Conference on Compound Semiconductor Manufacturing Technology
Location: Virtual
Country: US
Start Date: May 24, 2021
End Date: May 27, 2021
Sponsors: Compound Semiconductor Manufacturing Technology (CS ManTech)
Funding Number(s)
WBS: 427922.04.02.01
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
NASA Technical Management
Keywords
Integrated Circuit
silicon carbide
JFET
High Temperature

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