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Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge GenerationHeavy ion, focused X-ray, pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. The transient shape characteristics depend on the source (ion, X-ray, or laser), even when similar amounts of charge are generated. The observed differences are examined and explained in terms of basic charge collection mechanisms.
Document ID
20210010229
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Kaitlyn L Ryder (Vanderbilt University Nashville, Tennessee, United States)
Landen D Ryder (Goddard Space Flight Center Greenbelt, Maryland, United States)
Andrew L. Sternberg (Vanderbilt University Nashville, Tennessee, United States)
John A. Kozub (Vanderbilt University Nashville, Tennessee, United States)
En Xia Zhang (Vanderbilt University Nashville, Tennessee, United States)
Stephen D. LaLumondiere (The Aerospace Corporation El Segundo, California, United States)
Daniele M. Monahan (The Aerospace Corporation El Segundo, California, United States)
Jeremy P. Bonsall (The Aerospace Corporation El Segundo, California, United States)
Ani Khachatrian (United States Naval Research Laboratory Washington D.C., District of Columbia, United States)
Stephen P. Buchner (United States Naval Research Laboratory Washington D.C., District of Columbia, United States)
Dale McMorrow (United States Naval Research Laboratory Washington D.C., District of Columbia, United States)
Joel M. Hales (Key W Corporation Herndon, VA)
Yuanfu Zhao (Beijing Microelectronics Technology Institute Beijing, China)
Liang Wang (Beijing Microelectronics Technology Institute Beijing, China)
Chuanmin Wang (Beijing Microelectronics Technology Institute Beijing, China)
Robert A. Weller (Vanderbilt University Nashville, Tennessee, United States)
Ronald D. Schrimpf (Vanderbilt University Nashville, Tennessee, United States)
Sharon M. Weiss (Vanderbilt University Nashville, Tennessee, United States)
Robert A Reed (Vanderbilt University Nashville, Tennessee, United States)
Date Acquired
February 17, 2021
Publication Date
April 1, 2021
Publication Information
Publication: Transactions on Nuclear Science (TNS)
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
URL: https://ieeexplore.ieee.org/Xplore/home.jsp
DOI: 10.1109/TNS.2021.3060339
Subject Category
Space Radiation
Quality Assurance And Reliability
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: virtual
Country: US
Start Date: November 29, 2020
End Date: December 30, 2020
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: 80NSSC20K0424
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.
Technical Review
External Peer Committee
Keywords
Heavy ions
Focused X-ray
pulsed laser
single-event effects
single-event transients
two-photon absorption
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