NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Press Enter or click the Search button to begin your search.

Back to Results
Wide Bandgap Semiconductor Devices & Systems for Communications in Extreme EnvironmentThe feasibility of Ka-band gallium nitride (GaN) based high power amplifier (HPA) for signal amplification in extreme planetary environment is investigated and its measured performance is presented. The data includes Pout, PAE, EVM for several waveforms and data rates, output spectrum, IMD, Noise Figure, and Gain. The data indicates excellent overall performance. Potential application of this HPA includes communication systems required to operate in the extreme hot environment of Mercury and Venus, extreme cold and high radiation environment of Jupiter’s icy moons, and Artemis missions that involve human/robotic exploration and long-term presence on the Moon.
Document ID
20220010099
Acquisition Source
Glenn Research Center
Document Type
Presentation
Authors
Rainee N. Simons
(Glenn Research Center Cleveland, Ohio, United States)
Date Acquired
June 30, 2022
Subject Category
Communications And Radar
Meeting Information
Meeting: IEEE International Symposium on Antennas & Propagation & USNC-URSI Radio Science Meeting
Location: Denver, CO
Country: US
Start Date: July 10, 2022
End Date: July 15, 2022
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: 981698.01.04.22.03.05
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Technical Review
Single Expert
Keywords
Gallium Nitride
Wide Bandgap Semiconductors
High Power Microwave Amplifier
Artemis missions
Planetary Missions
Error Vector Magnitude
Noise Figure
Balanced Amplifier
GaN HEMT
GaN MMIC
No Preview Available