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Mechanisms of Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Single Event Transients in an Epitaxial Silicon DiodeHeavy ion-, focused X ray-, and pulsed laser induced single event effects in an epitaxial silicon diode were simulated using Sentaurus Technology Computer Aided Design (TCAD). The variation of the potential with time in simulation agrees with previous experimental data, which suggests that the different radiation sources result in different amounts of potential modulation. The charge generation spatial profile strongly affects the potential modulation. The longitudinal range and starting location of generated charge most strongly impacts the amount of potential modulation, while the radial width has a slight effect, and the temporal duration of charge injection has negligible impact on potential modulation
Document ID
20220010345
Acquisition Source
Goddard Space Flight Center
Document Type
Poster
Authors
Kaitlyn L. Ryder
(Goddard Space Flight Center Greenbelt, Maryland, United States)
Landen D. Ryder
(Goddard Space Flight Center Greenbelt, Maryland, United States)
Andrew L. Sternberg
(Vanderbilt University Nashville, Tennessee, United States)
John A. Kozub
(Vanderbilt University Nashville, Tennessee, United States)
EnXia Zhang
(Vanderbilt University Nashville, Tennessee, United States)
Stephen D. LaLumondiere
(The Aerospace Corporation El Segundo, California, United States)
Daniele M. Monahan
(The Aerospace Corporation El Segundo, California, United States)
Jeremy P. Bonsall
(The Aerospace Corporation El Segundo, California, United States)
Ani Khachatrian
(United States Naval Research Laboratory Washington D.C., District of Columbia, United States)
Steven P. Buchner
(United States Naval Research Laboratory Washington D.C., District of Columbia, United States)
Dale McMorrow
(United States Naval Research Laboratory Washington D.C., District of Columbia, United States)
Joel M. Hales
(United States Naval Research Laboratory Washington D.C., District of Columbia, United States)
Yuanfu Zhao
(Beijing Microelectronics Technology Institute Beijing, China)
Liang Wang
(Beijing Microelectronics Technology Institute Beijing, China)
Chuanmin Wang
(Beijing Microelectronics Technology Institute Beijing, China)
Robert A. Weller
(Vanderbilt University Nashville, Tennessee, United States)
Ronald D. Schrimpf
(Vanderbilt University Nashville, Tennessee, United States)
Sharon M. Weissb
(Vanderbilt University Nashville, Tennessee, United States)
Robert A. Reed
(Vanderbilt University Nashville, Tennessee, United States)
Date Acquired
July 7, 2022
Publication Date
July 21, 2022
Publication Information
Subject Category
Lasers And Masers
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: Provo, UT
Country: US
Start Date: July 18, 2022
End Date: July 22, 2022
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: 817091.40.31.51.04
CONTRACT_GRANT: HDTRA1-16-1-0007
CONTRACT_GRANT: 80NSSC20K0424
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.
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