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Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space MissionsIn this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.
Document ID
20230001062
Acquisition Source
Glenn Research Center
Document Type
Presentation
Authors
Rainee N. Simons (Glenn Research Center Cleveland, Ohio, United States)
Joseph A. Downey (Glenn Research Center Cleveland, Ohio, United States)
Bryan L. Schoenholz (Glenn Research Center Cleveland, Ohio, United States)
Marie T. Piasecki (Glenn Research Center Cleveland, Ohio, United States)
Nang T. Pham (Glenn Research Center Cleveland, Ohio, United States)
Mansoor K. Siddiqui (Northrop Grumman (United States) Falls Church, Virginia, United States)
Ralph G. Bonnin (Northrop Grumman (United States) Falls Church, Virginia, United States)
Date Acquired
January 23, 2023
Subject Category
Communications and Radar
Report/Patent Number
318-SH37
Meeting Information
Meeting: IEEE Radio & Wireless Week (RWW2023)
Location: Las Vegas, NV
Country: US
Start Date: January 22, 2023
End Date: January 25, 2023
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: 981698.01.04.22.03.05
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
Single Expert
Keywords
High power amplifier
gallium nitride
SATCOM
Ka-band
MMICs
interoperability
wideband
multi-missions

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