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800 °C Demonstrated kHz SiC IC Electronics and Pressure Sensors as Technical Foundation for Realizing MHz DARPA HOTS GoalsThe HOTS program will develop a technology for high-bandwidth, high-dynamic-range sensing at high temperature. Performance will be validated through the development and demonstration of a pressure sensor module (i.e., integrated transducer and signal-conditioning microelectronics) achieving the following performance goals: NASA Glenn has unique technology experience in extreme environment pressure sensors & IC electronics, including at 800 °C in air, providing significant risk reduction in meeting DARPA HOTS goals. Appropriate partnership and tech transfer should accelerate realization of DARPA HOTS hard technical challenges.
Document ID
20230008215
Acquisition Source
Glenn Research Center
Document Type
Poster
Authors
Philip G. Neudeck
(Glenn Research Center Cleveland, Ohio, United States)
Robert S. Okojie
(Glenn Research Center Cleveland, Ohio, United States)
Srihari Rajgopal
(Glenn Research Center Cleveland, Ohio, United States)
Gary W. Hunter
(Glenn Research Center Cleveland, Ohio, United States)
Date Acquired
May 25, 2023
Subject Category
Instrumentation and Photography
Meeting Information
Meeting: DARPA High Operational Temperature Sensors (HOTS) Proposers' Day
Location: McLean, VA
Country: US
Start Date: May 31, 2023
Sponsors: Defense Advanced Research Projects Agency
Funding Number(s)
WBS: 427922.04.10.01.18
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Technical Review
NASA Technical Management
Keywords
SiC pressure sensor electronics high temperature
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