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Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTsThis paper presents results from metal contact processing experiments towards the implementation of durable 500 °C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p-type ohmic contacts have been demonstrated on a 0.25 μm-thick p-type homoepitaxial layer of doping 8 x 1018 ± 4 x 1018 cm-3. Preliminary current-voltage characteristics of fabricated BJTs are presented.
Document ID
20230013116
Acquisition Source
Glenn Research Center
Document Type
Poster
Authors
Srihari Rajgopal (Glenn Research Center Cleveland, Ohio, United States)
David J Spry (Glenn Research Center Cleveland, Ohio, United States)
Dorothy Lukco (HX5 (United States) Fort Walton Beach, Florida, United States)
Philip G Neudeck ORCID(Glenn Research Center Cleveland, Ohio, United States)
Date Acquired
September 8, 2023
Publication Date
September 17, 2023
Subject Category
Electronics and Electrical Engineering
Meeting Information
Meeting: International Conference on Silicon Carbide and Related Materials (ICSCRM)
Location: Sorrento
Country: IT
Start Date: September 17, 2023
End Date: September 22, 2023
Sponsors: University of Naples Federico II
Funding Number(s)
WBS: 427922.04.10.01.14
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
NASA Technical Management
Keywords
4H-SiC BJT
wide bandgap electronics
RF SiC
high temperature electronics

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