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Single Event Effect Testing of the SSDI SFF6661 N-Channel Power MOSFETThis irradiation campaign was performed to evaluate the destructive single event effect (SEE) susceptibility of a n-channel power MOSFET from SSDI for space-based instrumentation. Testing was performed at Michigan State University’s (MSU) Facility for Rate Isotope Beams (FRIB) using an LET of 50.5 MeV·cm2/mg
Document ID
20230017327
Acquisition Source
Goddard Space Flight Center
Document Type
Technical Memorandum (TM)
Authors
Landen D. Ryder (Vanderbilt University Nashville, Tennessee, United States)
Jason M. Osheroff (Goddard Space Flight Center Greenbelt, United States)
Megan C. Casey (Goddard Space Flight Center Greenbelt, United States)
Matthew B. Joplin (Goddard Space Flight Center Greenbelt, United States)
Date Acquired
November 28, 2023
Publication Date
December 1, 2023
Publication Information
Subject Category
Electronics and Electrical Engineering
Funding Number(s)
WBS: 258548.06.07.01.02.01
Distribution Limits
Public
Copyright
Use by or on behalf of the US Gov. Permitted.
Technical Review
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