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Total Ionizing Dose Test Report Microchip JANTXV2N6284 NPN Darlington Power Si TransistorThis study was undertaken to determine the effects of total ionizing dose (TID) on the JANTXV2N6284 NPN Darlington power bipolar junction transistor (BJT). The device was parametrically characterized prior to, at each incremental dose step, and after irradiation. Testing was at a low-dose rate using the NASA GSFC Radiation Effects Facility (REF).
Document ID
20240008706
Acquisition Source
Goddard Space Flight Center
Document Type
Technical Memorandum (TM)
Authors
Kaitlyn L Ryder (Goddard Space Flight Center Greenbelt, United States)
Michael J Campola (Goddard Space Flight Center Greenbelt, United States)
Hak S Kim (Science Systems and Applications (United States) Lanham, Maryland, United States)
Date Acquired
July 10, 2024
Publication Date
November 16, 2023
Publication Information
Publisher: National Aeronautics and Space Administration
URL: https://radhome.gsfc.nasa.gov/
Subject Category
Instrumentation and Photography
Report/Patent Number
NASA/TM-20240008706
Funding Number(s)
WBS: 394490.02.01.01.01
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
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