Development of a High Frequency Class-A Amplifier for High Temperature Wireless Microsystems based on a Silicon Carbide Static Induction Transistor

Next generation gas turbine engine health monitoring for high performance jet engine-powered aircraft will incorporate integrated microelectronic sensors specifically designed to enhance aircraft functionality, engine efficiency, and safety. Temperature, air flow and pressure associated with the gas path as well as emissions from the engine correlate to the state of the combustor and other engine health conditions. Monitoring these parameters accurately requires positioning electronic sensors in the hot zone of the gas turbine engine, which exposes them to temperatures in excess of 400ºC. At these temperatures, signal amplification is needed at the transducer level to distinguish the desired measured signal from the significant electronic noise generated by the harsh environment. In this presentation, we report on the simulation, development, fabrication, and testing on a high temperature Class-A amplifier which utilizes a 4H-SiC Static Induction Transistor (SIT) as the active device and input/output matching and DC bias networks comprised of thin-film spiral inductors, metal-insulator-metal capacitors, and thick film chip resistors. A small signal model that emulates the operation of the 4H-SiC SIT from 25 to 400ºC, with an emphasis on operation at 400οC, was utilized. Measurements were performed from 25 to 400ºC to generate current-voltage curves, capacitive transistor characteristics and high frequency scattering parameters (S-parameters). The measured data was used to extrapolate the transconductance, gm, as a function of temperature for model development. Circuit simulation tools were used to generate S-parameters, which were compared to the measured values. At 400οC, a maximum difference between measured and simulated S-parameters for frequencies from 20 to 100 MHz were 3.84%, 0.68%, 10.61%, and 3.26% for S21, S12, S11, and S22, respectively. The average transit frequency, ft, was calculated from measured values to be 197.8 MHz, while the simulated value from the model was found to be 200 MHz. The Amplifier’s S-parameters were recorded at 20-100 MHz over a temperature range of 25-400ºC and show a gain of approximately 15.8 and 5.80 dBm at 25 and 400ºC, respectively. The input and output reflection coefficients at 50 MHz and 400ºC were -18.5 and -15.2 dB, respectively. The noise figure and phase noise were measured over the temperature range of 25-400ºC and recorded. The noise figure increased 21% at 50 MHz over the temperature range, while the 1 kHz offset of the phase noise remained below -110 dB. The stability factor, K, calculated with measured and simulated data demonstrates unconditional stability over the frequency range at 400ºC. Lastly, the 1-dB compression point was measured at 50 MHz and 400ºC with an approximated output of 9.5 dBm.