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Challenges of relaxed n-type GaP on Si and strategies to enable low threading dislocation density
External Source
chorus
Document Type
Accepted Manuscript
Authors
Ryan D. Hool
(Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign 1 , Urbana, Illinois 61801, USA)
Yukun Sun
(Nick Holonyak, Jr. Micro & Nanotechnology Laboratory, University of Illinois at Urbana-Champaign 2 , Urbana, Illinois 61801, USA)
Brian D. Li
(Nick Holonyak, Jr. Micro & Nanotechnology Laboratory, University of Illinois at Urbana-Champaign 2 , Urbana, Illinois 61801, USA)
Pankul Dhingra
(Nick Holonyak, Jr. Micro & Nanotechnology Laboratory, University of Illinois at Urbana-Champaign 2 , Urbana, Illinois 61801, USA)
Rachel W. Tham
(Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign 1 , Urbana, Illinois 61801, USA)
Shizhao Fan
(Nick Holonyak, Jr. Micro & Nanotechnology Laboratory, University of Illinois at Urbana-Champaign 2 , Urbana, Illinois 61801, USA)
Minjoo Larry Lee
(Nick Holonyak, Jr. Micro & Nanotechnology Laboratory, University of Illinois at Urbana-Champaign 2 , Urbana, Illinois 61801, USA)
Date Acquired
October 21, 2024
Publication Information
Publication: Journal of Applied Physics
Publisher: AIP Publishing
Volume: 130
Issue: 24
ISSN: 0021-8979
e-ISSN: 1089-7550
Funding Number(s)
funding: 1736181
funding: 80NSSC18K1171
funding: 80NSSC19K1174
funding: DE-EE0008545
Distribution Limits
Public

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