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Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment
External Source
chorus
Document Type
Accepted Manuscript
Authors
Chen Yang
Houqiang Fu
Po-Yi Su
Hanxiao Liu
Kai Fu
Xuanqi Huang
Tsung-Han Yang
Hong Chen
Jingan Zhou
Xuguang Deng
Jossue Montes
Xin Qi
Fernando A. Ponce
Yuji Zhao
Date Acquired
October 26, 2026
Publication Date
June 8, 2020
Publication Information
Publication: Applied Physics Letters
Publisher: AIP Publishing
Volume: 117
Issue: 5
Issue Publication Date: March 8, 2020
ISSN: 0003-6951
e-ISSN: 1077-3118
DOI: 10.1063/5.0018473
Funding Number(s)
funding: ECCS-1542160
funding: 80NSSC17K0768
funding: DE-AR0000868
Distribution Limits
Public

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